Data and figures related to publication: Investigation of a novel AlZnN semiconductor alloy

<div>The data provided here is related to the publication:<br>"Investigation of a novel AlZnN semiconductor alloy"<br>Materials Letters: X (2020); <a href="https://doi.org/10.1016/j.mlblux.2020.100052" rel="noreferrer noopener" target="_blank">https://doi.org/10.1016/j.mlblux.2020.100052</a><br><br>The study reported in this paper was funded by the EPSRC (Fund code EP/M507611/1) and Johson Matthey PLC. The financial support by these parties is highly appreciated.<br><br>The data required to reproduce each figure panel is provided in different text files. Columns are separated by a space character. The first line in each column describes the dataset. The complete figures are also included as .tif files.<br><br>With the added context of the paper, it should be easy to reproduce the figures.<br><br><b>Figure 1:</b> (a) Zn and Al peaks in EDS spectra, (b) AlN fraction plotted against the Zn₃N₂ fraction, and (c) GIXRD measurements of samples ZN and AZN-1 to AZN-4. The dashed line in (b) indicates the stoichiometric ratio of Al_2xZn_3(1-x)N₂.<br><b><br>Figure 2:</b> (a) Extinction coefficient and (b) refractive index of AlZnN films obtained from ellipsometry measurements. (c) Cody plot analysis used to measure the optical bandgap of AlZnN films.<br><br><b>Figure 3:</b> (a) Optical bandgap, (b) refractive index, (c) resistivity, and (d) carrier concentration of different AlZnN films. The star (☆) in (a) shows the intrinsic bandgap of Zn₃N₂ as reported by Kumagai <i>et al</i>.³ The dashed lines are intended as guides to the eye.<br></div>