The data provided here is related to the publication: "Investigation of a novel AlZnN semiconductor alloy" Materials Letters: X (2020); https://doi.org/10.1016/j.mlblux.2020.100052
The study reported in this paper was funded by the EPSRC (Fund code
EP/M507611/1) and Johson Matthey PLC. The financial support by these
parties is highly appreciated.
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Figure 1: (a) Zn and Al peaks in EDS spectra, (b) AlN fraction plotted against the Zn3N2 fraction, and (c) GIXRD measurements of samples ZN and AZN-1 to AZN-4. The dashed line in (b) indicates the stoichiometric ratio of Al2xZn3(1-x)N2. Figure 2: (a) Extinction coefficient and (b) refractive index of AlZnN films obtained from ellipsometry measurements. (c) Cody plot analysis used to measure the optical bandgap of AlZnN films.
Figure 3: (a) Optical bandgap, (b) refractive index, (c) resistivity, and (d) carrier concentration of different AlZnN films. The star (☆) in (a) shows the intrinsic bandgap of Zn3N2 as reported by Kumagai et al.3 The dashed lines are intended as guides to the eye.
Funding
EPSRC (EP/M507611/1)
Johnson Matthey PLC (Award No. 14550005)
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