Data for: InAs n-i-p Diodes Fabricated using S and Si Ion Implantation

Files in this repository correspond to the results in "InAs n-i-p Diodes Fabricated using S and Si Ion Implantation" submitted to IEEE Transactions on Electron Devices.

The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) required to replicate the figures.

Manuscript Abstract:

Planar Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) can provide significant avalanche gain with negligible excess noise. Reported InAs e-APDs are so far all top-side illuminated p-i-n diodes. Yet back-side illuminated n-i-p diodes are needed to be compatible with focal plane arrays (bump-bonding process). This work reports n-type ion implantation into i-InAs layer grown on p-InAs layers, forming n-i-p diodes for the first time. Electrical and optical characteristics of S and Si implanted mesa and planar photodiodes are investigated both experimentally and through simulation. The mesa InAs n-i-p diodes fabricated from implanted samples exhibit similar dark current densities to previously reported Be implanted mesa InAs p-i-n diodes. A peak responsivity of 1.09 A/W at 2004 nm wavelength was demonstrated using S implanted detectors after rapid thermal annealing at 600°C for 30s. The simple planar diodes exhibit higher dark current compared to Be implanted planar InAs p-i-n diodes. This is attributed to poor junction isolation resulting from n-type unintentional doping in intrinsic InAs layers. This was mitigated by adding isolation trenches around the diodes (removal of material or introducing p-doping). Therefore, we have demonstrated a promising approach for fabricating bump-bonding compatible and back-illuminated InAs n-i-p planar diodes.