Data for: InAs n-i-p Diodes Fabricated using S and Si Ion Implantation

<p dir="ltr">Files in this repository correspond to the results in "InAs n-i-p Diodes Fabricated using S and Si Ion Implantation" submitted to IEEE Transactions on Electron Devices.</p><p dir="ltr">The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) required to replicate the figures.</p><p dir="ltr">Manuscript Abstract:</p><p dir="ltr">Planar Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) can provide significant avalanche gain with negligible excess noise. Reported InAs e-APDs are so far all top-side illuminated p-i-n diodes. Yet back-side illuminated n-i-p diodes are needed to be compatible with focal plane arrays (bump-bonding process). This work reports n-type ion implantation into i-InAs layer grown on p-InAs layers, forming n-i-p diodes for the first time. Electrical and optical characteristics of S and Si implanted mesa and planar photodiodes are investigated both experimentally and through simulation. The mesa InAs n-i-p diodes fabricated from implanted samples exhibit similar dark current densities to previously reported Be implanted mesa InAs p-i-n diodes. A peak responsivity of 1.09 A/W at 2004 nm wavelength was demonstrated using S implanted detectors after rapid thermal annealing at 600°C for 30s. The simple planar diodes exhibit higher dark current compared to Be implanted planar InAs p-i-n diodes. This is attributed to poor junction isolation resulting from n-type unintentional doping in intrinsic InAs layers. This was mitigated by adding isolation trenches around the diodes (removal of material or introducing p-doping). Therefore, we have demonstrated a promising approach for fabricating bump-bonding compatible and back-illuminated InAs n-i-p planar diodes.</p>