Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys

<p>The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al_1-xGa_xAsSb quaternary alloys” <a href="http://dx.doi.org/10.1109/LPT.2016.2601651">DOI: 10.1109/LPT.2016.2601651</a>. </p><p><br></p> <p>There are two types of files:</p> <p>-.PNG, which corresponds to the figures </p> <p>-.CSV, which are raw data in figures</p> <p>The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al_1-xGa_xAs_0.56Sb_0.44 for <i>x</i> = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, <i>E_g</i>, of Al_1-xGa_xAs_0.56Sb_0.44.</p> <p>The data consists of results from Al_1-xGa_xAs_0.56Sb_0.44 avalanche photodiodes (<i>x</i> = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file. </p><p><br></p><div><br></div>