Data for paper: InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
dataset
posted on 2016-09-16, 09:21 authored by Shiyu Xie, Xinxin ZhouXinxin Zhou, Shiyong ZhangShiyong Zhang, DAVID J. THOMSON, Xia Chen, GRAHAM T. REED, Jo Shien Ng, Chee TanChee Tan<p>The files correspond to experimental results in
paper (accepted by Optics Express): “InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product” <a href="https://doi.org/10.1364/OE.24.024242">DOI: 10.1364/OE.24.024242</a>.</p><p><br></p>
<p>There are two groups of
files:</p><p></p>
<p>-.PNG/BMP, which
corresponds to the figures</p>
<p>-.CSV, which are raw
data in figures </p>
<p>The work in this paper mainly focus on the development
of gain-bandwidth product APDsby using novel avalanche material. We demonstrate an InGaAs/AlGaAsSb APD, grown on an InP substrate,
with a GBP of 424 GHz, the highest value reported for InP-compatible APDs,
which is applicable to future optical communication systems at or above 10 Gb/s. </p>
<p>The data consists of results from InGaAs/AlGaAsSb
avalanche photodiodes: dark current, photocurrent, frequency response and gain-bandwidth
product. More details about these data/figures can be found in README file.</p>
Funding
EPSRC grant: EP/K001469/1
History
Related Materials
- 1.
- 2.
- 3.
Ethics
- There is no personal data or any that requires ethical approval
Policy
- The data complies with the institution and funders' policies on access and sharing
Sharing and access restrictions
- The data can be shared openly
Data description
- The file formats are open or commonly used
Methodology, headings and units
- Headings and units are explained in the files
