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Data for paper: InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product

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posted on 2016-09-16, 09:21 authored by Shiyu Xie, Xinxin ZhouXinxin Zhou, Shiyong ZhangShiyong Zhang, DAVID J. THOMSON, Xia Chen, GRAHAM T. REED, Jo Shien Ng, Chee TanChee Tan

The files correspond to experimental results in paper (accepted by Optics Express): “InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product” DOI: 10.1364/OE.24.024242.


There are two groups of files:

-.PNG/BMP, which corresponds to the figures

-.CSV, which are raw data in figures

The work in this paper mainly focus on the development of gain-bandwidth product APDsby using novel avalanche material. We demonstrate an InGaAs/AlGaAsSb APD, grown on an InP substrate, with a GBP of 424 GHz, the highest value reported for InP-compatible APDs, which is applicable to future optical communication systems at or above 10 Gb/s.

The data consists of results from InGaAs/AlGaAsSb avalanche photodiodes: dark current, photocurrent, frequency response and gain-bandwidth product. More details about these data/figures can be found in README file.

Funding

EPSRC grant: EP/K001469/1

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  • There is no personal data or any that requires ethical approval

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    Department of Electronic and Electrical Engineering

    Categories

    Keywords

    Avalanche photodiodes, AlGaAsSb, Gain-bandwidth productCompound Semiconductors

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    CC BY 4.0

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