Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes: Dataset and Figures

Datasets of the figures found in the manuscript "Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes"

Files in this repository correspond to the results in "Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes" submitted to IEEE Transactions on Electron Devices.

The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) require to replicate the figures.

Manuscript Abstract:

Near-infrared linear mode Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes (APDs) exhibit excellent temperature stability, potentially simplifying Geiger mode operation. We have carried out the first experimental evaluation of In_0.53Ga_0.47As/Al_0.85Ga_0.15As_0.56Sb_0.44 APDs in Geiger mode. Characterization on multiple devices included temperature-dependent dark current, avalanche multiplication, dark count rate (DCR), afterpulsing, and single photon detection efficiency (SPDE). The temperature coefficient of breakdown voltage extracted from avalanche multiplication data was 13.5 mV.K⁻¹, much lower than InGaAs/InP Geiger mode APDs, reducing changes in operation voltage and offering possible protection from high optical power thermal attack in communication systems. At 200 K, SPDE were 5%–16% with DCR of 1–20 Mc·s⁻¹, comparable to InAlAs and early InP-based Single Photon APDs. The afterpulsing at 200 K was negligible for hold-off time >50 µs (reducing to 5 µs at 250 K). These are similar to the performance of InGaAs/InAlAs and some InGaAs/InP Geiger mode APDs.