Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes: Dataset and Figures

<p dir="ltr">Datasets of the figures found in the manuscript "Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes"</p><p dir="ltr">Files in this repository correspond to the results in "Development of InGaAs/AlGaAsSb Geiger mode Avalanche Photodiodes" submitted to IEEE Transactions on Electron Devices.</p><p dir="ltr">The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) require to replicate the figures. </p><p dir="ltr">Manuscript Abstract:</p><p dir="ltr">Near-infrared linear mode Al_0.85Ga_0.15As_0.56Sb_0.44 avalanche photodiodes (APDs) exhibit excellent temperature stability, potentially simplifying Geiger mode operation. We have carried out the first experimental evaluation of In_0.53Ga_0.47As/Al_0.85Ga_0.15As_0.56Sb_0.44 APDs in Geiger mode. Characterization on multiple devices included temperature-dependent dark current, avalanche multiplication, dark count rate (DCR), afterpulsing, and single photon detection efficiency (SPDE). The temperature coefficient of breakdown voltage extracted from avalanche multiplication data was 13.5 mV.K⁻¹, much lower than InGaAs/InP Geiger mode APDs, reducing changes in operation voltage and offering possible protection from high optical power thermal attack in communication systems. At 200 K, SPDE were 5%–16% with DCR of 1–20 Mc·s⁻¹, comparable to InAlAs and early InP-based Single Photon APDs. The afterpulsing at 200 K was negligible for hold-off time >50 µs (reducing to 5 µs at 250 K). These are similar to the performance of InGaAs/InAlAs and some InGaAs/InP Geiger mode APDs. </p>