Low Excess Noise Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> Avalanche Photodiodes Lattice Matched to InAs: Dataset and Figures
<p dir="ltr">Datasets of the figures found in the manuscript "Low Excess Noise Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> Avalanche Photodiodes Lattice Matched to InAs"</p><p dir="ltr">Files in this repository correspond to the results in "Low Excess Noise Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> Avalanche Photodiodes Lattice Matched to InAs" submitted to IEEE Transactions on Electron Devices Journal.</p><p dir="ltr">The figure files contain the graphical figures (.png) found within the manuscript, and the data (.csv) required to replicate the figures.</p><p dir="ltr">Manuscript Abstract:</p><p dir="ltr">Indium arsenide (InAs) is an exceptional material for absorbing infrared photons with wavelengths up to 3500 nm, making it ideal for mid-infrared detection. However, the development of high-performance Separate Absorption and Multiplication Avalanche Photodiodes (SAM APDs) has been hindered by the absence of suitable low-noise avalanche materials compatible with InAs absorbers. In this study, we investigate the potential of Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> (lattice matched to InAs) as a low-noise avalanche material. We have performed comprehensive Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69 </sub>excess noise measurements using three optical signal wavelengths on a large number of p-i-n and n-i-p devices. Under pure electron injection, Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> p-i-n diodes exhibit very low excess noise factors ~ 4 at high gain of 100, corresponding to an effective k of 0.02 - 0.03. In contrast, a small gain of 3 produces very high excess noise factors (> 17) when using hole injection in the n-i-p diodes. The contrasting behavior indicates that in Al0.8In0.2As0.31Sb0.69 electron ionization coefficient is much larger than hole ionization coefficient. As a consequence, low-noise Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> avalanche regions emerge as a promising candidate for the avalanche region of SAM APDs designed for mid-infrared applications, such as methane gas sensing and imaging through fog. The design of such SAM APDs should ensure electrons rather than holes are injected into the Al<sub>0.8</sub>In<sub>0.2</sub>As<sub>0.31</sub>Sb<sub>0.69</sub> avalanche regions to achieve the lowest possible excess noise factors.<br></p>
Funding
Single Photons - Expanding the Spectrum (SPEXS)
Engineering and Physical Sciences Research Council
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