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Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon (1.94 MB)

Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection

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posted on 2024-03-25, 15:08 authored by Tarick BlainTarick Blain, Chee Hing Tan, Jo Shien Ng, Vladimir Shulyak, Mark HopkinsonMark Hopkinson, Im Sik HanIm Sik Han

Data from "Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection".

Files include .png images of each figure and .csv files containing the data from each figure.

Fig. 1 - Simulated Be implant profile produced using transport of ions in Matter software.

Fig. 2 - Cross-sectional diagram of planar InAs APD device structure (not drawn to scale) (top). Scanning electron microscope image of several 80 × 80 µm2 pixels (bottom).

Fig. 3 - Capacitance (open symbols) and depletion width (closed symbols) of a 200 × 200 µm2 pixel (top) and unintentional doping level extracted from the capacitance measurement (bottom).

Fig. 4 - Reverse dark current density (solid line), avalanche gain (symbols), and gain normalized dark current density (dashed line) of a packaged 80 × 80 µm2 pixel measured in a liquid nitrogen cooled cryostat.

Fig. 5 - 1550-nm wavelength NEP of the APD/preamp configuration measured around 10 kHz with a 100-Hz span (symbols) and theoretical NEP (solid line).

Fig. 6 - SNR measurement (top) on a cooled 80 × 80 µm2 pixel optical power of 8.77 pW. Measured FFT spectra (bottom) at avalanche gains of 1 (solid black line), 54 (red dashed line), and 105 (dotted green line).

Fig. 7 - FFT spectra around 10 kHz (12-Hz span) with the detectors illuminated with weak 10-kHz modulated 1550-nm wavelength pulses.

Fig. 8 - Magnitudes of signal peaks at low optical powers (symbols) and linear fit (solid line).

Fig. 9 - Comparison of current–voltage characteristics of 80 × 80 µm2 (red lines) and a 200 × 200 µm2 (black lines) pixels with (solid lines) and without (dashed lines) shielding from blackbody radiation.

Fig. 10 - Reverse dark current density temperature dependence of a the temperature dependence of the diode’s ideality factor extracted from shielded 200 × 200 µm2 pixel between 80 and 280 K. The inset shows the forward current–voltage data of Fig. 9.

Fig. 11 - Temperature dependence of the dark current density at −0.1 V for a 200 × 200 µm2 pixel (symbols) and Arrhenius fits between 295 and 180 K (dashed line) and 180 and 120 K (dotted line).

Fig. 12 - Dark currents at −0.1 V of pixels of different areas measured between 295 and 140 K (symbols) plotted with expected bulk dark currents extrapolated from the largest area pixels (dashed lines).


EPSRC: EP/S026428/1



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