A GaAsSb/AlGaAsSb Avalanche Photodiode with a very small Temperature Coefficient of Breakdown Voltage
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posted on 2022-04-19, 14:34 authored by Ye Cao, Tarick Osman, Edmund ClarkeEdmund Clarke, Pallavi PatilPallavi Patil, Jo NgJo Ng, Chee TanChee Tan<div>Avalanche photodiodes (APDs) made with the
material AlGaAsSb (lattice-matched to InP) exhibit
very low excess noise characteristics. We demonstrate a Separate Absorption and
Multiplication APD (SAM-APD) incorporating a GaAs<sub>0.52</sub>Sb<sub>0.48</sub>
(GaAsSb) absorption region and an Al<sub>0.85</sub>Ga<sub>0.15</sub>As<sub>0.56</sub>Sb<sub>0.44</sub>
(AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits cut-off
wavelength of 1.70 μm at room temperature and a responsivity of 0.39 A/W at
1.55 μm wavelength (no antireflection coating). Temperature dependence of the
breakdown voltage was obtained from avalanche gain data from multiple devices
operated at 77 to 295 K. This produced a temperature coefficient of breakdown
voltage of 4.31±0.33 mV/K, a factor of 10 and 5 smaller than values for
comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of
this work is consistent with the extremely weak temperature dependence of
avalanche breakdown previously observed in AlGaAsSb diodes.<br></div>
Funding
UK-Engineering and Physical Sciences Research Council grants (EP/N020715/1 and EP/K001469/1)
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