The University of Sheffield
Browse
1/1
6 files

Extremely Low Excess Noise Avalanche Photodiode with GaAsSb Absorption Region and AlGaAsSb Avalanche Region

figure
posted on 2023-02-01, 00:01 authored by Ye CaoYe Cao, Tarick Osman, Jonathan Taylor-MewJonathan Taylor-Mew, Longyan LiLongyan Li, Jo NgJo Ng, Chee TanChee Tan

  

An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consisting of a GaAs0.52Sb0.48 absorption region and an Al0.85Ga0.15As0.56Sb0.44 avalanche region, is reported. The device incorporated an appropriate doping profile to suppress tunnelling current from the absorption region, achieving a large avalanche gain, ~130 at room temperature. It exhibited extremely low excess noise factors, of 1.52 and 2.48 at the gain of 10 and 20, respectively. At the gain of 20, our measured excess noise factor of 2.48 is more than 3 times lower than that in the commercial InGaAs/InP SAM-APD. These results were corroborated by a Simple Monte Carlo simulation. Our results demonstrated the potential of low excess noise performance from GaAs0.52Sb0.48/ Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes.

Funding

UK-Engineering and Physical Sciences Research Council grants (EP/N020715/1 and EP/K001469/1)

History

Ethics

  • The project has ethical approval and the number is included in the description field

Policy

  • The data complies with the institution and funders' policies on access and sharing

Sharing and access restrictions

  • The data requires access restrictions, explained in the description field, and the files are closed

Data description

  • The file formats are open or commonly used

Methodology, headings and units

  • Headings and units are explained in the files

Usage metrics

    Department of Electronic and Electrical Engineering

    Licence

    Exports

    RefWorks
    BibTeX
    Ref. manager
    Endnote
    DataCite
    NLM
    DC