Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Photodiode: Dataset and Figures

Datasets of the figures found in the manuscript "Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode"

Files in this repository correspond to the results in "Room Temperature InGaAs/AlGaAsSb Single Photon Avalanche Diode" submitted to IEEE Photonics Journal.

The figure files contain the graphical figures (.png) found within the manuscript and the data (.csv) require to replicate the figures.

Manuscript Abstract:

Near-infrared Single Photon Avalanche Diodes (SPADs) are the dominant, practical single photon detectors for quantum applications and low-level optical sensing. Although some infrared SPADs can operate at room temperature, thermoelectric coolers are still essential, increasing complexity (operation and device packaging) and power consumption. Passively-cooled SPADs could be realized by avalanche materials exhibiting better temperature stability. A promising candidate is the InGaAs/AlGaAsSb SPAD, because the AlGaAsSb multiplier is highly stable with temperature. In this work, we report single photon detection performance of InGaAs/AlGaAsSb SPADs at room temperature and 1550 nm wavelength using multiple devices for each type of measurements. With 0.1 photons per pulse and 15 µm diameter devices, the maximum SPDE was 14 % at DCR of 30 Mc.s^‑1, respectively. The best NEP value is around an order of magnitude higher than InGaAs/InP SPADs, but are comparable to InGaAs/InAlAs SPADs. Within the relevant overbias range and repetition rate up to 1 MHz, the DCR was unaffected by afterpulsing. Timing jitters were as low as 150 ps, matching InGaAs/InP SPADs. The results of this work are much more competitive than the previous report of InGaAs/AlGaAsSb SPAD, which required cooling to 200 K to detect single photons. Further research could help InGaAs/AlGaAsSb SPADs progressing towards passively-cooled single photon detectors for room temperature operation.